Synthesis of heteroepitaxial Si/CoSi2/Si structures by Co implantation into Si

Abstract

Heteroepitaxial Si/CoSi2/Si structures have been formed in both (100) and (111)Si by high-dose implantation of Co. During the implantation, Co is incorporated in the Si lattice as CoSi2 with the same orientation as the Si substrate. Upon annealing the implanted Co distribution is transformed into an epitaxial Si/CoSi2/Si layered structure. Sputtering of Si during the implantation of Co was studied using an implanted Si3N4 marker layer. The Si/CoSi2/Si/Si3N4/Si multilayer structure that is formed in this way demonstrates the potential of the ion beam synthesis technique.