R. Rakkhit

Process induced oxide damage and its implications to device reliability of submicron transistors

R. Rakkhit, F.P. Heiler, Peng Fang et al. · 1993 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization and optimization of metal etch processes to minimize charging damage to submicron transistor gate oxide

M.-R. Lin, Peng Fang, F.P. Heiler et al. · IEEE Electron Device Letters · 1994 · 16 citations

Engineering, Electrical Engineering, Materials Science +14

A comprehensive study of performance and reliability of P, As, and hybrid As/P nLDD junctions for deep-submicron CMOS logic technology

Deepak Kumar Nayak, Ming-Yin Hao, J. Umali et al. · IEEE Electron Device Letters · 1997 · 15 citations

Engineering, Computer Engineering, Electrical Engineering +17

Drain-Avalanche Induced Hole Injection and Generation of Interface Traps in Thin Oxide MOS Devices

R. Rakkhit, S. Haddad, Chi Chang et al. · Reliability physics · 1990 · 13 citations

Engineering, Computer Engineering, Electrical Engineering +17

Slight gate oxide thickness increase in PMOS devices with BF₂ implanted polysilicon gate

Jiunn-Yann Tsai, Ying Shi, S. Prasad et al. · IEEE Electron Device Letters · 1998 · 11 citations

Engineering, Electrical Engineering, Materials Science +17