S. Mittal

High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

Sarunya Bangsaruntip, G. M. Cohen, A. Majumdar et al. · 2009 · 289 citations

Engineering, Excellent Electrostatic Scaling, High Performance +16

A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge<inf>x</inf>Sb<inf>y</inf>Te<inf>z</inf> phase change material

Huai‐Yu Cheng, T. H. Hsu, Simone Raoux et al. · 2011 · 77 citations

Engineering, Computer Architecture, Phase Change Memory +17

Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm

Sarunya Bangsaruntip, A. Majumdar, G. M. Cohen et al. · 2010 · 54 citations

Low-power Electronics, Electrical Engineering, Ac Characterization Shows +15

14nm FinFET technology for analog and RF applications

Jagar Singh, A. Bousquet, J. Ciavatti et al. · 2017 · 51 citations

Electrical Engineering, Engineering, Rf Semiconductor +9

Analytical Estimation of Threshold Voltage Variability by Metal Gate Granularity in FinFET

P. Harsha Vardhan, S. Mittal, Swaroop Ganguly et al. · IEEE Transactions on Electron Devices · 2017 · 30 citations

Device Modeling, Electrical Engineering, Semiconductor Device +12