J.Y.-C. Sun - Concepedia

Author

J.Y.-C. Sun

Taiwan Semiconductor Manufacturing Company (Taiwan)ORCID

Also Known As

J. Sun, J. Y. -C. Sun, J.Y-C. Sun, J.Y. Sun, J.Y.-C. Sun, J.Y.C. Sun, Jing Sun

Publications

Citations

H-Index

Concepts

All Affiliations

Taiwan Semiconductor Manufacturing Company (Taiwan)IBM (United States)IBM Research - Thomas J. Watson Research Center Analog Devices (United States)

About

J.Y.-C. Sun is an author at Taiwan Semiconductor Manufacturing Company (Taiwan) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	16	912
2	Electrical Engineering	11	13	862
3	Computer Engineering	10	10	434
4	Applied Physics	7	7	668
5	Materials Engineering	1	1	36

J.Y.-C. Sun

Publications

953

Citations

H-Index

Page 1

	Year	Citations
Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits D.L. Harame, J.H. Comfort, John D. Cressler, IEEE Transactions on Electron Devices Si/sige Epitaxial-base TransistorsElectrical EngineeringWafer Scale ProcessingEngineeringEpitaxial Growth	1995	377
Si/SiGe epitaxial-base transistors. II. Process integration and analog applications D.L. Harame, J.H. Comfort, John D. Cressler, IEEE Transactions on Electron Devices Si/sige Epitaxial-base TransistorsEngineeringDevice IntegrationAnalog DesignIntegrated Circuits	1995	218
CMOS technology for MS/RF SoC C.H. Diaz, D.D. Tang, J.Y.-C. Sun IEEE Transactions on Electron Devices Electrical EngineeringPhysical Design (Electronics)EngineeringVlsi DesignCircuit Design	2003	63
Advanced CMOS Technology Portfolio for RF IC Applications C. S. Chang, C.P. Chao, John Chern, IEEE Transactions on Electron Devices Electrical EngineeringPhysical Design (Electronics)EngineeringAdvanced Packaging (Semiconductors)Radio Frequency	2005	42
63-75 GHz f<sub>T</sub> SiGe-base heterojunction bipolar technology G.L. Patton, J.H. Comfort, B.S. Meyerson,	1990	41
Characterization and comparison of high-k metal-insulator-metal (MiM) capacitors in 0.13 μm Cu BEOL for mixed-mode and RF applications Y. L. Tu, H.L. Lin, Lumen Chao, Materials EngineeringMaterials ScienceElectrical EngineeringRf ApplicationsTemperature Linearity	2004	36
Mis-match characterization of 1.8 V and 3.3 V devices in 0.18 μm mixed signal CMOS technology Ta-Hsun Yeh, Jason Lin, Shyh-Chyi Wong, Low-power ElectronicsElectrical EngineeringPrecision Analog DesignEngineeringVlsi Design	2002	24
A high-performance 0.08 μm CMOS L.T. Su, S. Subbanna, E.F. Crabbé, Low-power ElectronicsElectrical EngineeringμM CmosEngineeringVlsi Design	2002	21
CMOS-on-SOI ESD protection networks Steven H. Voldman, R. Schulz, J. K. Howard, Journal of Electrostatics Hardware SecurityEngineeringVlsi DesignComputer EngineeringTrusted Execution Environment	1998	19
High-Speed Underwater Acoustic Communication Based on OFDM Jianguo Huang, J.Y.-C. Sun, Chengbing He, Underwater Wireless CommunicationsMulti-carrier CommunicationEngineeringUnderwater Acoustic CommunicationOfdm System	2006	18

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