Si/SiGe epitaxial-base transistors. II. Process integration and analog applications

TLDR

The paper reviews process integration challenges for Si/SiGe epitaxial-base transistors, covering both simple non‑self‑aligned and complex self‑aligned device structures and the extension to high‑level SiGe HBT BiCMOS integration. The study systematically reviews process integration, analyzing both simple non‑self.

Abstract

For pt. I, see ibid., vol. 3, p. 455-68 (1995). This part focuses on process integration concerns, first described in general terms and then detailed through an extensive review of both simple non-self-aligned device structures and more complex self-aligned device structures. The extension of SiGe device technology to high levels of integration is then discussed through a detailed review of a full SiGe HBT BiCMOS process. Finally, analog circuit design is discussed and concluded, with a description of a 12-bit Digital-to-Analog Converter presented to highlight the current status of SiGe technology.