R. Dettmer

The Energy Dependence of Proton-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors

B.K. Choï, Hugh Barnaby, Daniel M. Fleetwood et al. · IEEE Transactions on Nuclear Science · 2004 · 140 citations

Engineering, Electrical Engineering, Materials Science +17

Wet Chemical Digital Etching of GaAs at Room Temperature

G. DeSalvo, C. Bozada, J. Ebel et al. · Journal of The Electrochemical Society · 1996 · 87 citations

Engineering, Electrical Engineering, Materials Science +17

Gigahertz operation in flexible transistors on plastic substrates

Yugang Sun, Etienne Menard, John A. Rogers et al. · Applied Physics Letters · 2006 · 72 citations

Engineering, Electrical Engineering, Materials Science +16

Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors

Hung-Ta Wang, B. S. Kang, F. Ren et al. · Applied Physics Letters · 2005 · 55 citations

Engineering, Electrical Engineering, Electrochemistry +14

Effects of Sc₂O₃ and MgO passivation layers on the output power of AlGaN/GaN HEMTs

J. Gillespie, Robert Fitch, J. Sewell et al. · IEEE Electron Device Letters · 2002 · 47 citations

Engineering, Materials Engineering, Materials Science +17