J. Plesiewicz

Statistics

Publications

Citations

276

H-Index

Active since

2005

Affiliations

Institute of High Pressure Physics(Current)

TopGaN (Poland)

Polish Academy of Sciences

Cornell University

Ritsumeikan University

J. Plesiewicz is an author at Institute of High Pressure Physics specializing in materials science, semiconductor materials, and electronic materials.

ORCID

Publications per year

2005–2022

Publications

AlGaN/GaN HEMT structures on ammono bulk GaN substrate

P. Kruszewski, P. Prystawko, Irmantas Kašalynas et al. · Semiconductor Science and Technology · 2014 · 65 citations

Engineering, Electrical Engineering, Materials Science +17

Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy

M. Leszczyński, R. Czernecki, Stanisław Krukowski et al. · Journal of Crystal Growth · 2010 · 43 citations

Engineering, Materials Engineering, Materials Science +16

Electronic structure and effective masses of InN under pressure

I. Gorczyca, J. Plesiewicz, L. Dmowski et al. · Journal of Applied Physics · 2008 · 38 citations

Natural Sciences, Materials Science, Physics +17

Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers

R. Czernecki, S. Kret, Paweł Kempisty et al. · Journal of Crystal Growth · 2014 · 32 citations

Engineering, Materials Engineering, Materials Science +14

Lateral Control of Indium Content and Wavelength of III–Nitride Diode Lasers by Means of GaN Substrate Patterning

M. Sarzyński, T. Suski, G. Staszczak et al. · Applied Physics Express · 2012 · 27 citations

Engineering, Materials Science, Physics +17

1–5 of 9