A. Peeva

High temperature-induced crystallization in tantalum pentoxide layers and its influence on the electrical properties

E. Atanassova, M. Kalitzova, Giuseppe Zollo et al. · Thin Solid Films · 2003 · 69 citations

Natural Sciences, Materials Engineering, Materials Science +14

Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon

R. Kögler, A. Peeva, W. Anwand et al. · Applied Physics Letters · 1999 · 28 citations

Engineering, Materials Engineering, Materials Science +17

Analysis of interface impurities in electroplated Cu layers by using GD‐OES and TOF‐SIMS

Denis Klemm, M. Stangl, A. Peeva et al. · Surface and Interface Analysis · 2008 · 25 citations

Natural Sciences, Materials Engineering, Materials Science +15

Physical Characterization of PECVD and PEALD Ru(-C) Films and Comparison with PVD Ruthenium Film Properties

H. Wojcik, Marcel Junige, W. Bartha et al. · Journal of The Electrochemical Society · 2011 · 24 citations

Natural Sciences, Materials Engineering, Materials Science +16

He-induced cavity formation in silicon upon high-temperature implantation

P.F.P. Fichtner, A. Peeva, M. Behar et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2000 · 20 citations · Full text

Engineering, Materials Engineering, Materials Science +13