Xuerui Niu

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved <i>g</i> _<i>m</i> and Gain Linearity

Hao Lu, Bin Hou, Ling Yang et al. · IEEE Transactions on Electron Devices · 2021 · 59 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gain Linearity +12

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

Ling Yang, Bin Hou, Fuchun Jia et al. · IEEE Transactions on Electron Devices · 2022 · 50 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Multiscale Global Context Network for Semantic Segmentation of High-Resolution Remote Sensing Images

Qiaolin Zeng, Jingxiang Zhou, Jinhua Tao et al. · IEEE Transactions on Geoscience and Remote Sensing · 2024 · 37 citations

Convolutional Neural Network, Scene Analysis, Engineering +20

High V_TH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer

Mao Jia, Bin Hou, Ling Yang et al. · IEEE Electron Device Letters · 2023 · 32 citations

Semiconductor Technology, Improved Gate Reliability, Electrical Engineering +10

Improved RF Power Performance of AlGaN/GaN HEMT Using by Ti/Au/Al/Ni/Au Shallow Trench Etching Ohmic Contact

Hao Lu, Xiaohua Ma, Bin Hou et al. · IEEE Transactions on Electron Devices · 2021 · 21 citations

Wide-bandgap Semiconductor, Electrical Engineering, Smooth Surface Morphology +12