C. Sampedro

A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects

Francisco G. Ruiz, Andr�s Godoy, F. Gámiz et al. · IEEE Transactions on Electron Devices · 2007 · 82 citations

Device Modeling, Comprehensive Study, Electrical Engineering +15

Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI

C. Sampedro, F. Gámiz, A. Godoy et al. · Solid-State Electronics · 2010 · 46 citations · Full text

Electrical Engineering, Engineering, Physics +5

Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers

Luca Donetti, F. Gámiz, Noel Rodríguez et al. · Applied Physics Letters · 2006 · 38 citations

Engineering, Ultrathin Silicon, Acoustic Metamaterial +16

An Analytical $I$– $V$ Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects

J.B. Roldán, F. Gámiz, F. Jiménez-Molinos et al. · IEEE Transactions on Electron Devices · 2010 · 31 citations · Full text

Device Modeling, Electrical Engineering, Semiconductor Device +12

${Z}^{\textsf {2}}$ -FET as Capacitor-Less eDRAM Cell For High-Density Integration

Carlos Navarro, Meng Duan, Mukta Singh Parihar et al. · IEEE Transactions on Electron Devices · 2017 · 31 citations

Electrical Engineering, 2-D Numerical Simulations, Engineering +14