An Analytical $I$– $V$ Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects

Abstract

A new analytical model is presented for the inversion charge of surrounding-gate transistors (SGTs). Quantum effects are taken into account by means of a modified capacitance model that includes the inversion charge centroid and a correction to the threshold voltage. A drain current model for the SGT that includes velocity saturation, short channel, and velocity overshoot effects is also developed. The model accurately reproduces both simulated and experimental results for different silicon core radii and gate voltages.