A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> In this paper, simulation-based research on the electrostatics of Pi-gate silicon-on-insulator (SOI) MOSFETs is carried out. To do so, a 2-D self-consistent SchrÖdinger–Poisson solver has been implemented. The inclusion of the quantum effects has been demonstrated to be necessary for the accurate simulation of these devices in the nanometer range. Specifically, this paper is focused on the corner effects in multiple-gate SOI MOSFETs, defined as the formation of independent channels with different threshold voltages. Corner effects are studied as a function of different parameters, such as the doping density, silicon-fin dimensions, corner rounding, and gate oxide thickness. Finally, the relation between corner effects and the transition from a fully to a partially depleted body is analyzed. </para>