Shigeomi Hishiki

A Temperature Stable Amplifier Characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si

Arijit Bose, Debaleen Biswas, Shigeomi Hishiki et al. · IEEE Access · 2021 · 28 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +9

Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy

Sergey A. Reshanov, Gerhard Pensl, Katsunori Danno et al. · Journal of Applied Physics · 2007 · 26 citations

Wide-bandgap Semiconductor, Engineering, Dlts Peak +16

Characterization of Mn-doped 3C-SiC prepared by ion implantation

Fumiyoshi Takano, Wenhong Wang, Hiroyuki Akinaga et al. · Journal of Applied Physics · 2007 · 22 citations

Materials Engineering, Magnetism, Spintronics +11

Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer

Arijit Bose, Debaleen Biswas, Shigeomi Hishiki et al. · IEEE Electron Device Letters · 2020 · 22 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Decrease of Charge Collection Due to Displacement Damage by Gamma Rays in a 6H-SiC Diode

Shinobu Onoda, Takeshi Ohshima, Toshio Hirao et al. · IEEE Transactions on Nuclear Science · 2007 · 18 citations

Electrical Engineering, Engineering, Displacement Damage +13