Concepedia

Debaleen Biswas

DB

Statistics

Publications

6

Citations

103

H-Index

6

Active since

2016

Affiliations

Nagoya Institute of Technology(Current)

Air Water (Japan)

Debaleen Biswas is an author at Nagoya Institute of Technology specializing in electrical engineering, applied physics, and engineering.

ORCID

Top concepts

Publications per year

2016–2021

6

Publications

6

A Temperature Stable Amplifier Characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si

Arijit Bose, Debaleen Biswas, Shigeomi Hishiki et al. · IEEE Access · 2021 · 28 citations · Full text

, , +9

Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer

Arijit Bose, Debaleen Biswas, Shigeomi Hishiki et al. · IEEE Electron Device Letters · 2020 · 22 citations

, , +11

Effect of excess hafnium on HfO2 crystallization temperature and leakage current behavior of HfO2/Si metal-oxide-semiconductor devices

Debaleen Biswas, M. Singh, A. K. Sinha et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2016 · 17 citations

, , +19

Trap state characterization of Al <sub>2</sub> O <sub>3</sub> /AlInGaN/GaN metal-insulator-semiconductor heterostructures

Debaleen Biswas, Naoki Torii, Hirotaka Fujita et al. · Semiconductor Science and Technology · 2019 · 14 citations

Effect of In composition on electrical performance of AlInGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si

Debaleen Biswas, Hirotaka Fujita, Naoki Torii et al. · Journal of Applied Physics · 2019 · 11 citations

, , +16

1–5 of 6