B. Pasenow

On the importance of radiative and Auger losses in GaN-based quantum wells

J. Hader, Jerome V. Moloney, B. Pasenow et al. · Applied Physics Letters · 2008 · 236 citations

Wide-bandgap Semiconductor, Quantum Science, Electrical Engineering +15

On the origin of IQE‐‘droop’ in InGaN LEDs

A. Laubsch, M. Sabathil, Werner Bergbauer et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 113 citations

Engineering, Optoelectronic Devices, Ingan Leds +17

Recent results of blue and green InGaN laser diodes for laser projection

Stephan Lutgen, Dimitri Dini, Ines Pietzonka et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2011 · 42 citations

Gain of blue and cyan InGaN laser diodes

Teresa Lermer, Alvaro Gomez‐Iglesias, M. Sabathil et al. · Applied Physics Letters · 2011 · 38 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +13

Auger losses in GaN‐based quantum wells: Microscopic theory

B. Pasenow, S. W. Koch, J. Hader et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 18 citations

Semiconductors, Quantum Science, Wide-bandgap Semiconductor +12