Auger losses in GaN‐based quantum wells: Microscopic theory

Abstract

Abstract Fully microscopic many‐body models are used to study the importance of radiative and Auger carrier losses in InGaN/GaN quantum wells. Since the usual direct bandto‐band Auger losses are too small to explain the experimentally observed droop of the external quantumefficiency in such structures, phonon assisted Auger processes are discussed. First numerical estimates indicate that the resulting losses constitute an important intrinsic loss process in InGaN/GaN quantum wells (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)