J. Hader

On the importance of radiative and Auger losses in GaN-based quantum wells

J. Hader, Jerome V. Moloney, B. Pasenow et al. · Applied Physics Letters · 2008 · 237 citations

Engineering, Electrical Engineering, Materials Science +17

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

J. Hader, Jerome V. Moloney, S. W. Koch · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2011 · 180 citations

Engineering, Electrical Engineering, Materials Science +17

Gain in 1.3 μm materials: InGaNAs and InGaPAs semiconductor quantum-well lasers

J. Hader, S. W. Koch, Jerome V. Moloney et al. · Applied Physics Letters · 2000 · 68 citations

Engineering, Materials Science, Physics +17

Quantum design strategy pushes high‐power vertical‐external‐cavity surface‐emitting lasers beyond 100 W

Tyan-Lin Wang, Bernd Heinen, J. Hader et al. · Laser & Photonics Review · 2012 · 66 citations

Engineering, Electrical Engineering, Optoelectronics +16

Experimental and theoretical analysis of optically pumped semiconductor disk lasers

Armis R. Zakharian, J. Hader, Jerome V. Moloney et al. · Applied Physics Letters · 2003 · 62 citations

Engineering, Electrical Engineering, Materials Science +17