Yannick Feurprier

Influence of the gas mixture on the reactive ion etching of InP in CH4-H2 plasmas

Yannick Feurprier, Christophe Cardinaud, G. Turban · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1997 · 27 citations

Natural Sciences, Chemistry, Materials Science +13

High aspect ratio SiO2 etching with high resist selectivity improved by addition of organosilane to tetrafluoroethyl trifluoromethyl ether

Yasuhiko Chinzei, Yannick Feurprier, M. Ozawa et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2000 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +15

MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor

Olivier Féron, Masakazu Sugiyama, Weerachai Asawamethapant et al. · Applied Surface Science · 2000 · 23 citations

Engineering, Electrical Engineering, Materials Engineering +13

Residence time effects on SiO2/Si selective etching employing high density fluorocarbon plasma

Yasuhiko Chinzei, Takanori Ichiki, Naokatsu Ikegami et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 21 citations

Natural Sciences, Materials Engineering, Materials Science +17

Proposal for an etching mechanism of InP in CH4-H2 mixtures based on plasma diagnostics and surface analysis

Yannick Feurprier, Christophe Cardinaud, B. Grolleau et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 19 citations

Natural Sciences, Materials Engineering, Materials Science +17