Yannick Feurprier - Concepedia

Author

Yannick Feurprier

Institut des Matériaux Jean Rouxel

Also Known As

Y Feurprier, Y. Feurprier, Yannick Feurprier, Yannick feurprier

Publications

222

Citations

H-Index

Concepts

All Affiliations

Institut des Matériaux Jean Rouxel Centre National de la Recherche Scientifique Nantes Université Toyo University The University of Tokyo

About

Yannick Feurprier is an author at Institut des Matériaux Jean Rouxel specializing in engineering, chemical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	180
2	Applied Physics	7	7	123
3	Chemical Engineering	7	7	134
4	Natural Sciences	3	3	44
5	Biochemistry	1	1	18

Yannick Feurprier

Publications

180

Citations

H-Index

Page 1

	Year	Citations
Influence of the gas mixture on the reactive ion etching of InP in CH4-H2 plasmas Yannick Feurprier, Christophe Cardinaud, G. Turban Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Organic GeochemistryChemical EngineeringEnvironmental ChemistryEngineeringMixture Composition	1997	27
High aspect ratio SiO2 etching with high resist selectivity improved by addition of organosilane to tetrafluoroethyl trifluoromethyl ether Yasuhiko Chinzei, Yannick Feurprier, M. Ozawa, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringHigh Resist SelectivityHfe 227Vacuum DeviceChemistry	2000	23
MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor Olivier Féron, Masakazu Sugiyama, Weerachai Asawamethapant, Applied Surface Science Materials EngineeringElectrical EngineeringEngineeringGaas SubstratesGrowth Rate	2000	23
Residence time effects on SiO2/Si selective etching employing high density fluorocarbon plasma Yasuhiko Chinzei, Takanori Ichiki, Naokatsu Ikegami, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringResidence TimeChemistryResidence Time EffectsSilicon On Insulator	1998	21
Proposal for an etching mechanism of InP in CH4-H2 mixtures based on plasma diagnostics and surface analysis Yannick Feurprier, Christophe Cardinaud, B. Grolleau, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringVacuum DeviceChemistryPlasma ProcessingChemical Engineering	1998	19
Etch product identification during - RIE of InP using mass spectrometry Yannick Feurprier, Christophe Cardinaud, B. Grolleau, Plasma Sources Science and Technology EngineeringBiological Mass SpectrometryOrganic ChemistryChemistrySpectrochemical Analysis	1997	18
Surface modification and etch product detection during reactive ion etching of InP in - plasma Yannick Feurprier, Christophe Cardinaud, G. Turban Plasma Sources Science and Technology EngineeringChemistryReactive Ion EtchingPlasma ProcessingChemical Engineering	1997	14
X-ray photoelectron spectroscopy damage characterization of reactively ion etched InP in CH4–H2 plasmas Yannick Feurprier, Christophe Cardinaud, G. Turban Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringPure Methane PlasmaChemistryPlasma ProcessingChemical Engineering	1998	12
Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges Angélique Raley, Lior Huli, Steven Grzeskowiak, EngineeringElectron-beam LithographyElectronic Design AutomationHigh-na Euv PatterningIon Implantation	2022	12
Microloading effect in ultrafine SiO2 hole/trench etching Yannick Feurprier, Yasuhiko Chinzei, Makoto Ogata, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceMaterials EngineeringEngineeringTrimethylsilane AdditionMicrofabrication	1999	11

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