Concepedia

MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor

Olivier Féron, Masakazu Sugiyama, Weerachai Asawamethapant, N. Futakuchi, Yannick Feurprier, Yoshiaki Nakano, Yukihiro Shimogaki

Applied Surface Science · 2000 · 23 citations · 4 references

DOI

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4

In-situ monitoring and control of surface processes in metalorganic vapor phase epitaxy by surface photo-absorption

Naoki Kobayashi · Journal of Crystal Growth · 1994 · 43 citations

, , +16

Kinetic studies on thermal decomposition of MOVPE sources using fourier transform infrared spectroscopy

Masakazu Sugiyama, Kenichiro Kusunoki, Yukihiro Shimogaki et al. · Applied Surface Science · 1997 · 41 citations

, , +17

In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAs/InP heterostructure by spectroscopic and kinetic ellipsometry

Shinya Sudo, Yoshiaki Nakano, Masakazu Sugiyama et al. · Thin Solid Films · 1998 · 30 citations

, , +15

Surface processes during growth of GaAs by MOCVD

L.J. Giling, M.H.J.M. de Croon · Journal of Crystal Growth · 1991 · 12 citations · Full text

, , +10