MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor - Concepedia

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MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor

23

Citations

4

References

2000

Year

Olivier Féron, Masakazu Sugiyama, Weerachai Asawamethapant, N. Futakuchi, Yannick Feurprier, Yoshiaki Nakano, Yukihiro Shimogaki

Applied Surface Science

Materials EngineeringElectrical EngineeringEngineeringGaas SubstratesGrowth RateApplied PhysicsHorizontal ReactorSemiconductor Device FabricationMolecular Beam EpitaxyMicroelectronicsOptoelectronicsCompound Semiconductor

References

	Year	Citations

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