L. Tóth

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

Muhammad Alshahed, Lars Heuken, M. Alomari et al. · IEEE Transactions on Electron Devices · 2018 · 45 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Growth of GaN layers onto misoriented (0001) sapphire by metalorganic chemical vapor deposition

B. Pécz, M.A. di Forte-Poisson, F. Huet et al. · Journal of Applied Physics · 1999 · 33 citations

Materials Science, Materials Engineering, Atomic Force Microscopy +13

Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

M. Ťapajna, R. Stoklas, D. Gregušová et al. · Applied Surface Science · 2017 · 33 citations

Materials Science, Oxide Heterostructures, Electrical Engineering +8

Hydrogen–argon plasma pre-treatment for improving the anti-corrosion properties of thin Al2O3 films deposited using atomic layer deposition on steel

Emma Härkönen, Stephen E. Potts, W. M. M. Kessels et al. · Thin Solid Films · 2013 · 31 citations

Materials Science, Materials Engineering, Chemical Engineering +11

Electron microscopy study of the formation of Ni5Al3 in a Ni62.5Al37.5 B2 alloy—I. Precipitation and growth

D. Schryvers, Ying Ma, L. Tóth et al. · Acta Metallurgica et Materialia · 1995 · 31 citations

Materials Science, Materials Engineering, Engineering +6