Florian Hörich

Two charge states of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">C</mml:mi><mml:mi mathvariant="normal">N</mml:mi></mml:msub></mml:math> acceptor in GaN: Evidence from photoluminescence

M. A. Reshchikov, Mykhailo Vorobiov, D. O. Demchenko et al. · Physical review. B./Physical review. B · 2018 · 123 citations

Engineering, Materials Engineering, Materials Science +17

Optical properties of cubic GaN from 1 to 20 eV

Martin Feneberg, Marcus Röppischer, Christoph Cobet et al. · Physical Review B · 2012 · 64 citations

Engineering, Materials Engineering, Materials Science +17

Properties of C‐doped GaN

A. G. Lesnik, Marc P. Hoffmann, Aqdas Fariza et al. · physica status solidi (b) · 2016 · 42 citations

Engineering, Materials Engineering, Materials Science +17

On reduction of current leakage in GaN by carbon-doping

Aqdas Fariza, A. G. Lesnik, J. Bläsing et al. · Applied Physics Letters · 2016 · 30 citations

Engineering, Materials Engineering, Materials Science +17

Sputter Epitaxy of AlN and GaN on Si(111)

A. Dadgar, Florian Hörich, Ralf Borgmann et al. · physica status solidi (a) · 2022 · 22 citations · Full text

Engineering, Materials Engineering, Materials Science +17