R. Actis

9.4-W/mm Power Density AlGaN–GaN HEMTs on Free-Standing GaN Substrates

K. Chu, P.C. Chao, M.T. Pizzella et al. · IEEE Electron Device Letters · 2004 · 95 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +11

Advances in InP HEMT technology for high frequency applications

P.M. Smith, K. B. Nichols, W. Kong et al. · 2002 · 20 citations

Electrical Engineering, Engineering, Rf Semiconductor +12

Micro-coaxial lines for active hybrid-monolithic circuits

Negar Ehsan, Evan Cullens, Kenneth Vanhille et al. · 2009 · 19 citations

Polystratatrade Process, Electrical Engineering, Omega Line +13

Large-signal characterization of millimeter-wave transistors using an active load-pull measurement system

R. Actis, R.A. McMorran, R.A. Murphy et al. · IEEE MTT-S International Microwave Symposium digest · 2003 · 12 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +13

High-performance 0.15-μm-gate-length pHEMTs enhanced with a low-temperature-grown GaAs buffer

R. Actis, K. B. Nichols, W. Kopp et al. · 2002 · 10 citations