D. Ney

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 173 citations

Engineering, Electrical Engineering, Microelectronics +15

Breakthroughs in 3D Sequential technology

Laurent Brunet, C. Fenouillet-Béranger, P. Batude et al. · 2018 · 52 citations

Engineering, Electrical Engineering, Materials Science +13

$1.62\mu \mathrm{m}$ Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared

Jonathan S. Steckel, E. Josse, Andras G. Pattantyus‐Abraham et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 52 citations

Natural Sciences, Materials Engineering, Materials Science +17

Managing SRAM reliability from bitcell to library level

Vincent Huard, Remy Chevallier, C. Parthasarathy et al. · 2010 · 38 citations

Engineering, Computer Engineering, Electrical Engineering +17

Stress-Induced Electromigration Backflow Effect in Copper Interconnects

D. Ney, X. Federspiel, V. Girault et al. · IEEE Transactions on Device and Materials Reliability · 2006 · 30 citations

Natural Sciences, Electrical Engineering, Materials Science +17