G. Bohnert

On excitation and decay mechanisms of the Yb³⁺luminescence in InP

K. Thonke, K. Pressel, G. Bohnert et al. · Semiconductor Science and Technology · 1990 · 66 citations

Natural Sciences, Materials Engineering, Materials Science +17

MOVPE grown InP:Er layers using Er(MeCp)3 and Er(IpCp)3

J. Weber, M. Moser, A. Sta̧por et al. · Journal of Crystal Growth · 1990 · 29 citations

Engineering, Electrical Engineering, Semiconductor Devices +1

A model for the Fe-related emission at 3057 cm−1 in GaAs

K. Pressel, G. Bohnert, G. Rückert et al. · Journal of Applied Physics · 1992 · 15 citations

Natural Sciences, Materials Science, Physics +17

MOVPE grown InP:Yb layers using Yb(IpCp)3 as a new doping source

J. Weber, M. Moser, A. Sta̧por et al. · Journal of Crystal Growth · 1990 · 14 citations

Natural Sciences, Materials Engineering, Materials Science +12

Transient characteristics of isoelectronic bound excitons at hole-attractive defects in silicon: The C(0.79 eV), P(0.767 eV), and H(0.926 eV) lines

G. Bohnert, K. Weronek, A. Hangleiter · Physical review. B, Condensed matter · 1993 · 13 citations

Natural Sciences, Materials Science, Physics +15