MOVPE grown InP:Er layers using Er(MeCp)3 and Er(IpCp)3

Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaP

Gernot S. Pomrenke, H. Ennen, W.H. Haydl · Journal of Applied Physics · 1986 · 127 citations

Engineering, Materials Engineering, Materials Science +14

Electrical properties of ytterbium-doped InP grown by metalorganic chemical vapor deposition

Peter Whitney, Kunihiko Uwai, H. Nakagome et al. · Applied Physics Letters · 1988 · 106 citations

Natural Sciences, Materials Science, Physics +17

Er-doped InP and GaAs grown by metalorganic chemical vapor deposition

Kunihiko Uwai, H. Nakagome, Kenichiro Takahei · Applied Physics Letters · 1987 · 57 citations

Engineering, Materials Engineering, Materials Science +17

Extremely sharp erbium-related intra-4<i>f</i>-shell photoluminescence of erbium-doped GaAs grown by metalorganic chemical vapor deposition

H. Nakagome, Kunihiko Uwai, Kenichiro Takahei · Applied Physics Letters · 1988 · 52 citations

Natural Sciences, Materials Engineering, Materials Science +17

Photoluminescence decay of 1.54 μm Er ³⁺ emission in Si and III-V semiconductors

P. B. Klein, Gernot S. Pomrenke · Electronics Letters · 1988 · 43 citations

Engineering, Materials Engineering, Materials Science +17