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A model for the Fe-related emission at 3057 cm−1 in GaAs
15
Citations
2
References
1992
Year
EngineeringLaser ApplicationsSemiconductor DeviceSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorOptical PropertiesElectronic EngineeringOptical SpectroscopyYag LaserFe-related EmissionCompound SemiconductorSemiconductor TechnologyElectrical EngineeringPhotoluminescencePhysicsFourier TransformNatural SciencesSpectroscopyApplied PhysicsOptoelectronics
We present Fourier transform infrared photoluminescence (PL) and absorption studies on GaAs:Fe to analyze the origin of the Fe-related emission at 3057 cm−1. Temperature-dependent PL spectra show additional hot lines and a characteristic phonon sideband linked to this Fe-related peak. Time-resolved studies, using the 1.06 μm line of a Nd:YAG laser for excitation, reveal a decay time of 1.9±0.3 ms. The long lifetime and the fine-structure splitting fit a model where the transitions take place between the 4T1 excited state and the 6A1 ground state of Fe3+ (3d5) in tetrahedral environment.
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