A. Dörnen

Deep-level defects and <i>n</i>-type-carrier concentration in nitrogen implanted GaN

D. Haase, M. Schmid, W. Kürner et al. · Applied Physics Letters · 1996 · 154 citations

Materials Science, Semiconductor Technology, Electrical Engineering +10

Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide

J. Schneider, H. Müller, K. Maier et al. · Applied Physics Letters · 1990 · 153 citations

Optical Materials, Engineering, Polytype-specific Photoluminescence +20

Structure of the 0.767-eV oxygen-carbon luminescence defect in 450 °C thermally annealed Czochralski-grown silicon

W. Kürner, R. Sauer, A. Dörnen et al. · Physical review. B, Condensed matter · 1989 · 68 citations

Engineering, Oxygen-carbon Luminescence Defects, Chemistry +18

Self-assembled InAs/GaAs quantum dots under resonant excitation

F. Adler, M. Geiger, A. Bauknecht et al. · Journal of Applied Physics · 1998 · 66 citations

Categoryquantum Electronics, Engineering, Resonant Excitation +16

Refractive index of (Al<i>x</i>Ga1−<i>x</i>)0.5In0.5P grown by metalorganic vapor phase epitaxy

M. Moser, R. Winterhoff, C. Geng et al. · Applied Physics Letters · 1994 · 50 citations

Materials Science, Complex Refractive Index, Ii-vi Semiconductor +13