Deep-level defects and <i>n</i>-type-carrier concentration in nitrogen implanted GaN

D. Haase, M. Schmid, W. Kürner, +5

Applied Physics Letters

Materials ScienceSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering +8

Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide

J. Schneider, H. Müller, K. Maier, +5

Applied Physics Letters

Optical MaterialsEngineeringPolytype-specific PhotoluminescenceMinority-carrier Lifetime KillerSilicon Carbide +18

Structure of the 0.767-eV oxygen-carbon luminescence defect in 450 °C thermally annealed Czochralski-grown silicon

W. Kürner, R. Sauer, A. Dörnen, +1

Physical review. B, Condensed matter

EngineeringOxygen-carbon Luminescence DefectsChemistryLuminescence PropertySpectroscopic Property +16

Self-assembled InAs/GaAs quantum dots under resonant excitation

F. Adler, M. Geiger, A. Bauknecht, +5

Journal of Applied Physics

Categoryquantum ElectronicsEngineeringResonant ExcitationOptoelectronic DevicesQuantum Engineering +14

Refractive index of (Al<i>x</i>Ga1−<i>x</i>)0.5In0.5P grown by metalorganic vapor phase epitaxy

M. Moser, R. Winterhoff, C. Geng, +3

Applied Physics Letters

Materials ScienceComplex Refractive IndexIi-vi SemiconductorEngineeringPhysics +11

Low pressure MOVPE of GaN and heterostructures

F. Scholz, V. Härle, Friedrich W. Steuber, +5

Journal of Crystal Growth

PhysicsApplied PhysicsGan Power DeviceLow Pressure MovpeCategoryiii-v Semiconductor

Crystal-field model of vanadium in 6H silicon carbide

B. Kaufmann, A. Dörnen, Frank S. Ham

Physical review. B, Condensed matter

EngineeringSolid-state ChemistryFourier-zeeman SpectroscopyElectronic StructureSemiconductors +15

Donorlike excited states of the thermally induced 0.767-eV (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>P</mml:mi></mml:math>line) defect in oxygen-rich silicon

J. Wagner, A. Dörnen, R. Sauer

Physical review. B, Condensed matter

Localized Excited StateEngineeringPhotoluminescence-excitation SpectroscopyChemistryElectronic Excited State +19

In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells

F. Scholz, A. Sohmer, J. Off, +5

Materials Science and Engineering B

Wide-bandgap SemiconductorPhysicsApplied PhysicsQuantum WellsComposition Fluctuations +3

Low pressure metalorganic vapor phase epitaxial growth of GaN/GaInN heterostructures

F. Scholz, V. Härle, H. Bolay, +7

Solid-State Electronics

Materials EngineeringMaterials ScienceWide-bandgap SemiconductorEngineeringApplied Physics +4