Refractive index of (Al<i>x</i>Ga1−<i>x</i>)0.5In0.5P grown by metalorganic vapor phase epitaxy

Abstract

Ordered and disordered (AlxGa1−x)0.5In0.5P (x=0, 0.33, 0.66) layers have been grown on GaAs by metalorganic vapor phase epitaxy. The complex refractive index below and above the band edge has been determined by transmission experiments and ellipsometry. We have observed, that ordered and disordered samples only differ near the fundamental band gap with respect to these properties.