MOVPE grown InP:Yb layers using Yb(IpCp)3 as a new doping source - Concepedia

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MOVPE grown InP:Yb layers using Yb(IpCp)3 as a new doping source

14

Citations

8

References

1990

Year

J. Weber, M. Moser, A. Stąpor, F. Scholz, G. Hörcher, A. Forchel, G. Bohnert, A. Hangleiter, A. Hammel, Johann Weidlein

Journal of Crystal Growth

Materials ScienceMaterials EngineeringEngineeringYb LayersCrystal Growth TechnologyApplied PhysicsMovpe Grown InpMolecular Beam EpitaxyNew Doping Source

References

	Year	Citations

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