MOVPE grown InP:Yb layers using Yb(IpCp)3 as a new doping source

Electrical properties of ytterbium-doped InP grown by metalorganic chemical vapor deposition

Peter Whitney, Kunihiko Uwai, H. Nakagome et al. · Applied Physics Letters · 1988 · 106 citations

Natural Sciences, Materials Science, Physics +17

Observation of enhanced single longitudinal mode operation in 1.5-μm GaInAsP erbium-doped semiconductor injection lasers

W. T. Tsang, R. A. Logan · Applied Physics Letters · 1986 · 74 citations

Engineering, Electrical Engineering, Materials Science +17

Liquid phase epitaxy and characterization of rare-earth-ion (Yb, Er) doped InP

H. Nakagome, K. Takahei, Yoshikazu Homma · Journal of Crystal Growth · 1987 · 69 citations

Natural Sciences, Materials Science, Physics +9

Excitation and decay mechanisms of the intra-4<i>f</i> luminescence of Yb3+ in epitaxial InP:Yb layers

W. Körber, A. Hangleiter · Applied Physics Letters · 1988 · 66 citations

Natural Sciences, Materials Science, Physics +14

Rare earth ions in LPE III-V semiconductors

W. Körber, J. Weber, A. Hangleiter et al. · Journal of Crystal Growth · 1986 · 66 citations

Engineering, Materials Engineering, Materials Science +14