V. M. Danil’tsev

Quantum corrections to the conductivity in two-dimensional systems: Agreement between theory and experiment

G. M. Minkov, O. É. Rut, A. V. Germanenko et al. · Physical review. B, Condensed matter · 2001 · 57 citations · Full text

Control of charge transport mode in the Schottky barrier by δ-doping: Calculation and experiment for Al/GaAs

V. I. Shashkin, A. V. Murel, V. M. Danil’tsev et al. · Semiconductors · 2002 · 35 citations

Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

D. V. Yurasov, V. M. Danil’tsev, P. A. Yunin · Semiconductors · 2015 · 26 citations

Microwave Detectors Based on Low-Barrier Planar Schottky Diodes and Their Characteristics

V. I. Shashkin, V. M. Danil’tsev, A.V. Maslovsky et al. · Radiophysics and Quantum Electronics · 2005 · 23 citations

Electrical Engineering, Engineering, Rf Semiconductor +7

Microstructure and properties of aluminum contacts formed on GaAs(100) by low pressure chemical vapor deposition with dimethylethylamine alane source

V. I. Shashkin, S. Rushworth, V. M. Danil’tsev et al. · Journal of Electronic Materials · 2001 · 16 citations

Materials Science, Aluminium Nitride, Aluminum Contacts +9