P. A. Yunin

Homoepitaxial growth of CVD diamond after ICP pretreatment

A. B. Muchnikov, A. L. Vikharev, J. E. Butler et al. · physica status solidi (a) · 2015 · 36 citations

Engineering, Cvd Growth, Crystal Growth Technology +16

Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

V. Ya. Aleshkin, N. V. Baidus, A. G. Fefelov et al. · Applied Physics Letters · 2016 · 34 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +12

Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

B. Ya. Ber, Petr Bábor, P. N. Brunkov et al. · Thin Solid Films · 2013 · 29 citations

Materials Science, Materials Engineering, Engineering +13

Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures

B. A. Andreev, K. E. Kudryavtsev, Artem N. Yablonskiy et al. · Scientific Reports · 2018 · 29 citations · Full text

Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

D. V. Yurasov, V. M. Danil’tsev, P. A. Yunin · Semiconductors · 2015 · 26 citations