P. A. Yunin - Concepedia

Author

P. A. Yunin

Institute for Physics of Microstructures ORCID

Also Known As

A., Yunin P., JSC CPF Salyut, Nizhny Novgorod, 603950, Russian Federation, JSC SPE Salut, Nizhny Novgorod, 603950, Russian Federation, P A Yunin, P. A. Yunin, P. Yunin, P.A. Yunin, P. A. Yunin, Pavel A Yunin, Pavel A. Yunin

246

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

Institute for Physics of Microstructures N. I. Lobachevsky State University of Nizhny Novgorod Nizhny Novgorod State Technical University G.A. Razuvaev Institute of Organometallic Chemistry Yaroslav-the-Wise Novgorod State University

About

P. A. Yunin is an author at Institute for Physics of Microstructures specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	32	585
2	Applied Physics	16	28	502
3	Natural Sciences	4	4	68
4	Chemical Engineering	3	3	51
5	Medicine	2	2	33

P. A. Yunin

Publications

850

Citations

H-Index

Page 1

	Year	Citations
Homoepitaxial growth of CVD diamond after ICP pretreatment A. B. Muchnikov, A. L. Vikharev, J. E. Butler, physica status solidi (a) EngineeringCvd GrowthCrystal Growth TechnologyPlasma ProcessingMaterials Fabrication	2015	36
Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate V. Ya. Aleshkin, N. V. Baidus, A. G. Fefelov, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringEngineeringApplied Physics	2016	34
Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques B. Ya. Ber, Petr Bábor, P. N. Brunkov, Thin Solid Films Materials ScienceMaterials EngineeringEngineeringPhysicsSputter Depth Profiling	2013	29
Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures B. A. Andreev, K. E. Kudryavtsev, Artem N. Yablonskiy, Scientific Reports	2018	29
Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy D. V. Yurasov, V. M. Danil’tsev, P. A. Yunin Semiconductors	2015	26
GaAs/Ge/Si epitaxial substrates: Development and characteristics Yury N. Buzynin, Boris N. Zvonkov, A. N. Buzynin, AIP Advances SemiconductorsSemiconductor TechnologyElectrical EngineeringEpitaxial GrowthEngineering	2017	26
Characterization of interfaces in mosaic CVD diamond crystal A. B. Muchnikov, D.B. Radishev, A. L. Vikharev, Journal of Crystal Growth Materials ScienceDiamond-like CarbonEngineeringCrystal MaterialOptical Properties	2016	25
Growth of high optical quality zinc chalcogenides single crystals doped by Fe and Cr by the solid phase recrystallization technique at barothermal treatment E. Gavrishuk, Elena Mozhevitina, Roman Avetisov, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringCrystal MaterialOptical Properties	2016	24
Plasma-chemical purification of iodine Leonid Mochalov, Alexander Logunov, Anna Kitnis, Separation and Purification Technology Chemical EngineeringEngineeringIodine Deficiency DisordersNonthermal PlasmaPlasma-chemical Purification	2019	24
Features of spectral properties of Sm3+ complexes with dithia- and diselenophosphinate ligands Anatoly P. Pushkarev, Artem N. Yablonskiy, P. A. Yunin, Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy Inorganic ChemistryEngineeringSm3+ ComplexesNatural SciencesSpectroscopy	2016	22

Page 1