K. E. Kudryavtsev - Concepedia

Author

K. E. Kudryavtsev

Institute for Physics of Microstructures ORCID

Also Known As

K E Kudryavtsev, K. E. Kudryavtsev, K. Kudryavtsev, K.E. Kudryavtsev, Konstantin E. Kudryavtsev, Konstantin Kudryavtsev, Kudryavtsev K. E., Kudryavtsev, K. E., К.Е. Kudryavtsev

Publications

807

Citations

H-Index

Concepts

All Affiliations

Institute for Physics of Microstructures N. I. Lobachevsky State University of Nizhny Novgorod Russian Academy of Sciences Université de Montpellier Institute of Semiconductor Physics

About

K. E. Kudryavtsev is an author at Institute for Physics of Microstructures specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	18	501
2	Applied Physics	13	18	501
3	Electrical Engineering	4	4	85
4	Materials Science	3	3	85
5	Natural Sciences	1	1	32

K. E. Kudryavtsev

Publications

619

Citations

H-Index

Page 1

	Year	Citations
Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 <i>μ</i>m S. V. Morozov, V. V. Rumyantsev, M. A. Fadeev, Applied Physics Letters Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Material	2017	71
Efficient long wavelength interband photoluminescence from HgCdTe epitaxial films at wavelengths up to 26 <i>μ</i>m S. V. Morozov, V. V. Rumyantsev, K. V. Maremyanin, Applied Physics Letters High Excitation LevelsEngineeringOptoelectronic DevicesLuminescence PropertySemiconductors	2014	40
SiGe nanostructures with self-assembled islands for Si-based optoelectronics Z. F. Krasilnik, K. E. Kudryavtsev, S. V. Obolenskiy, Semiconductor Science and Technology EngineeringOptoelectronic DevicesIntegrated CircuitsRoom-temperature ElectroluminescenceSilicon On Insulator	2010	39
Long wavelength stimulated emission up to 9.5 <i>μ</i>m from HgCdTe quantum well heterostructures S. V. Morozov, V. V. Rumyantsev, A. M. Kadykov, Applied Physics Letters Optical MaterialsEngineeringLaser ScienceLaser PhysicsLaser Applications	2016	38
Time resolved photoluminescence spectroscopy of narrow gap Hg1−xCdxTe/CdyHg1−yTe quantum well heterostructures S. V. Morozov, V. V. Rumyantsev, A. M. Kadykov, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesLuminescence PropertySemiconductor Nanostructures	2014	34
Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate V. Ya. Aleshkin, N. V. Baidus, A. G. Fefelov, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringEngineeringApplied Physics	2016	34
Highly doped InP as a low loss plasmonic material for mid-IR region Mohammad Esmail Aryaee Panah, Osamu Takayama, S. V. Morozov, Optics Express Materials SciencePlasmonicsEngineeringPhysicsOptical Properties	2016	34
Coherent Emission in the Vicinity of 10 THz due to Auger-Suppressed Recombination of Dirac Fermions in HgCdTe Quantum Wells S. Morozov, V. V. Rumyantsev, M. S. Zholudev, ACS Photonics	2021	33
Spectra and kinetics of THz photoconductivity in narrow-gap Hg<sub>1–<i>x</i></sub>Cd<i><sub>x</sub></i>Te (<i>x</i>< 0.2) epitaxial films V. V. Rumyantsev, S. V. Morozov, M. S. Zholudev, Semiconductor Science and Technology Thz PhotonicsEngineeringPc Relaxation ProcessTerahertz RegionOptoelectronic Devices	2013	32
Stimulated emission in the 28–35 μm wavelength range from Peltier cooled HgTe/CdHgTe quantum well heterostructures M. A. Fadeev, V. V. Rumyantsev, A. M. Kadykov, Optics Express EngineeringLaser ScienceLaser ApplicationsLaser MaterialSuper-intense Lasers	2018	30

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