Publication | Closed Access
Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 <i>μ</i>m
71
Citations
36
References
2017
Year
Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser MaterialOptoelectronic DevicesHigh-power LasersSemiconductorsStimulated EmissionSemiconductor LasersMolecular Beam EpitaxyHgcdte LasersCompound SemiconductorOptical PumpingQuantum SciencePhotonicsPhotoluminescencePhysicsOptoelectronic MaterialsApplied PhysicsMultilayer HeterostructuresHgcdte QuantumHgte/hgcdte QuantumOptoelectronics
We report on stimulated emission at wavelengths up to 19.5 μm from HgTe/HgCdTe quantum well heterostructures with wide-gap HgCdTe dielectric waveguide, grown by molecular beam epitaxy on GaAs(013) substrates. The mitigation of Auger processes in structures under study is exemplified, and the promising routes towards the 20–50 μm wavelength range, where HgCdTe lasers may be competitive to the prominent emitters, are discussed.
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