M. A. Fadeev

Statistics

Publications

Citations

461

H-Index

Active since

2016

Affiliations

Institute for Physics of Microstructures(Current)

N. I. Lobachevsky State University of Nizhny Novgorod

Institute of Semiconductor Physics

Russian Academy of Sciences

Laboratoire Charles Coulomb

M. A. Fadeev is an author at Institute for Physics of Microstructures specializing in optoelectronics, materials science, and optical properties of semiconductors.

ORCID

Publications per year

2016–2024

Publications

HgCdTe-based heterostructures for terahertz photonics

S. Ruffenach, A. M. Kadykov, V. V. Rumyantsev et al. · APL Materials · 2017 · 73 citations · Full text

Engineering, Materials Science, Physics +17

Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 <i>μ</i>m

S. V. Morozov, V. V. Rumyantsev, M. A. Fadeev et al. · Applied Physics Letters · 2017 · 73 citations

Engineering, Electrical Engineering, Materials Science +17

Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

V. V. Rumyantsev, S. V. Morozov, M. A. Fadeev et al. · Semiconductor Science and Technology · 2017 · 33 citations

Natural Sciences, Materials Science, Physics +17

Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well

S. S. Krishtopenko, S. Ruffenach, F. González‐Posada et al. · Physical review. B./Physical review. B · 2018 · 33 citations · Full text

Natural Sciences, Materials Science, Physics +17

Coherent Emission in the Vicinity of 10 THz due to Auger-Suppressed Recombination of Dirac Fermions in HgCdTe Quantum Wells

S. Morozov, V. V. Rumyantsev, M. S. Zholudev et al. · ACS Photonics · 2021 · 33 citations · Full text

Engineering, Materials Science, Physics +17

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