SiGe nanostructures with self-assembled islands for Si-based optoelectronics

Abstract

The effect of structure parameters on the electroluminescence and photoconductivity of multilayer structures with self-assembled Ge(Si)/Si(0 0 1) islands has been studied. The highest intensity of the room-temperature electroluminescence in the wavelength range of 1.3–1.55 µm has been observed for the islands grown at 600 °C. The same diode structures with Ge(Si)/Si(0 0 1) islands have demonstrated room-temperature photoconductivity signals in the wavelength range of 1.3–1.55 µm. The observed overlap of the electroluminescence and photoconductivity spectra obtained for the same structures with Ge(Si) islands makes these structures a promising material for the fabrication of a Si-based optocoupler. Less degradation after neutron irradiation has been observed for the electroluminescence and photoconductivity signals from multilayer structures with Ge(Si) self-assembled islands in comparison with bulk silicon structures. This result is associated with more effective confinement of charge carriers in the multilayer structures with Ge(Si) islands.