D. V. Yurasov

Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

V. Ya. Aleshkin, N. V. Baidus, A. G. Fefelov et al. · Applied Physics Letters · 2016 · 35 citations

Engineering, Materials Engineering, Materials Science +17

Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

D. V. Yurasov, V. B. Schmagin, K. E. Spirin · Journal of Applied Physics · 2015 · 29 citations

Engineering, Materials Engineering, Materials Science +17

Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

D. V. Yurasov, V. M. Danil’tsev, P. A. Yunin · Semiconductors · 2015 · 26 citations

Engineering, Materials Engineering, Materials Science +12

Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities

Artem N. Yablonskiy, D. E. Utkin, Viktoriia Rutckaia et al. · Semiconductor Science and Technology · 2018 · 24 citations

Natural Sciences, Materials Engineering, Materials Science +17

Optical monitoring of technological parameters during molecular-beam epitaxy

А. V. Goryunov, A. Yu. Luk’yanov, A. D. Tertyshnik et al. · Semiconductors · 2012 · 18 citations

Natural Sciences, Materials Science, Physics +16