A. V. Murel

Control of charge transport mode in the Schottky barrier by δ-doping: Calculation and experiment for Al/GaAs

V. I. Shashkin, A. V. Murel, V. M. Danil’tsev et al. · Semiconductors · 2002 · 35 citations

Engineering, Electrical Engineering, Materials Science +14

Microwave Detectors Based on Low-Barrier Planar Schottky Diodes and Their Characteristics

V. I. Shashkin, V. M. Danil’tsev, A.V. Maslovsky et al. · Radiophysics and Quantum Electronics · 2005 · 24 citations

Engineering, Electrical Engineering, Materials Science +16

Usage of antimony segregation for selective doping of Si in molecular beam epitaxy

D. V. Yurasov, A. V. Murel, N. D. Zakharov · Journal of Applied Physics · 2011 · 18 citations

Engineering, Materials Engineering, Materials Science +17

Microstructure and properties of aluminum contacts formed on GaAs(100) by low pressure chemical vapor deposition with dimethylethylamine alane source

V. I. Shashkin, S. Rushworth, V. M. Danil’tsev et al. · Journal of Electronic Materials · 2001 · 16 citations

Engineering, Materials Engineering, Materials Science +16

Theory of tunneling current in metal-semiconductor contacts with subsurface isotype δ-doping

V. I. Shashkin, A. V. Murel · Semiconductors · 2004 · 14 citations

Engineering, Electrical Engineering, Materials Science +14