S. A. Ringel

Deep levels in <i>p</i>-type InGaAsN lattice matched to GaAs

Daewon Kwon, Robert Kaplar, S. A. Ringel et al. · Applied Physics Letters · 1999 · 84 citations · Full text

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +16

Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1−xGex/Si substrates

R. M. Sieg, S. A. Ringel, S. M. Ting et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 70 citations

Semiconductors, Materials Science, Electrical Engineering +15

Deep-level defects in InGaAsN grown by molecular-beam epitaxy

Robert Kaplar, S. A. Ringel, S. R. Kurtz et al. · Applied Physics Letters · 2002 · 42 citations

Semiconductors, Deep-level Transient Spectroscopy, Dlts Peaks +10

Monolithic integration of AlGaInP laser diodes on SiGe∕Si substrates by molecular beam epitaxy

Ojin Kwon, John Boeckl, Minjoo Larry Lee et al. · Journal of Applied Physics · 2006 · 31 citations

Materials Science, Photonics, Electrical Engineering +15

Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN

Z. Zhang, Esmat Farzana, Wenyuan Sun et al. · Journal of Applied Physics · 2015 · 31 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +17