K. Kaneko

Highly reliable BEOL-transistor with oxygen-controlled InGaZnO and Gate/Drain offset design for high/low voltage bridging I/O operations

K. Kaneko, N. Inoue, S. Saito et al. · 2011 · 39 citations

Engineering, Electrical Engineering, Materials Science +17

A novel BEOL transistor (BETr) with InGaZnO embedded in Cu-interconnects for on-chip high voltage I/Os in standard CMOS LSIs

K. Kaneko, Naoya Inoue, Shinobu Saito et al. · Symposium on VLSI Technology · 2011 · 32 citations

Engineering, Computer Engineering, Electrical Engineering +17

Operation of functional circuit elements using BEOL-transistor with InGaZnO channel for on-chip high/low voltage bridging I/Os and high-current switches

K. Kaneko, H. Sunamura, M. Narihiro et al. · 2012 · 18 citations

Engineering, Electrical Engineering, Materials Science +12

High-performance Vertical Gate-All-Around Oxide Semiconductor Transistors with 6 nm ALD IGZO Channel and Scaled Contact CD down to 28 nm

Wanpeng Zhao, Wei Cui, Lu Kang et al. · 2024 · 15 citations

Engineering, Electrical Engineering, Materials Science +14

High-voltage complementary BEOL-FETs on Cu interconnects using N-type IGZO and P-type SnO dual oxide semiconductor channels

H. Sunamura, K. Kaneko, N. Furutake et al. · Symposium on VLSI Technology · 2013 · 12 citations

Engineering, Computer Engineering, Electrical Engineering +17