Symposium on VLSI Technology · 2013 · 12 citations · 0 references
EngineeringComputer EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignIntegrated Circuit DevicesInterconnect TechnologyMetal-oxide-semiconductor Field-effect TransistorsCmos Fabrication ProcessesCmos Inverter DesignCmos Logic CircuitsCmos Logic DesignComplementary Metal-oxide-semiconductor DevicesComplementary Metal-oxide-semiconductor Inverter DesignComplementary Metal-oxide-semiconductor LogicInverters
A BEOL-process-compatible, high-voltage complementary MISFET inverter formed on Si-LSI Cu-interconnects (hereafter we call BEOL-CMOS), is presented for the first time. High Ion/Ioff ratio N-type IGZO and P-type SnO dual oxide semiconductor channels are integrated to form BEOL-CMOS logic with just two mask addition to the state-of-the-art BEOL process. BEOL-CMOS flow is developed from the NFET and PFET unipolar technologies, resolving several integration issues. The high-VDD inverters enable low-Vin/high-Vout and high-Vin/low-Vout interactive operation (Vin: up to 20V, Vout: 0.9~5V). This BEOL-CMOS technology is a strong candidate to realize low-power voltage-bridging I/Os, which gives standard LSIs a special add-on function for smart society applications.