Yoann Mamy Randriamihaja

Microscopic scale characterization and modeling of transistor degradation under HC stress

Yoann Mamy Randriamihaja, V. Huard, X. Federspiel et al. · Microelectronics Reliability · 2012 · 47 citations · Full text

Electrical Engineering, Hc Stress, Engineering +10

New Hot Carrier degradation modeling reconsidering the role of EES in ultra short N-channel MOSFETs

Yoann Mamy Randriamihaja, X. Federspiel, V. Huard et al. · 2013 · 41 citations · Full text

Device Modeling, Multiple Carrier Interactions, Electrical Engineering +14

Impact of the gate-stack change from 40nm node SiON to 28nm High-K Metal Gate on the Hot-Carrier and Bias Temperature damage

A. Bravaix, Yoann Mamy Randriamihaja, V. Huard et al. · 2013 · 30 citations

Electrical Engineering, Engineering, Nanoelectronics +15

Off state incorporation into the 3 energy mode device lifetime modeling for advanced 40nm CMOS node

A. Bravaix, C. Guérin, D. Goguenheim et al. · 2010 · 27 citations

State Incorporation, Engineering, Energy Efficiency +16

Hot carrier degradation: From defect creation modeling to their impact on NMOS parameters

Yoann Mamy Randriamihaja, Alban Zaka, V. Huard et al. · 2012 · 17 citations · Full text

Defect Creation, Engineering, Hot Carrier Degradation +20