Po-Yi Su

Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress

Houqiang Fu, Kai Fu, Chen Yang et al. · Materials Today · 2021 · 43 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells

Eleonora Cominato Weiner, R. Jakomin, Daniel Neves Micha et al. · Solar Energy Materials and Solar Cells · 2018 · 36 citations · Full text

Engineering, Materials Engineering, Materials Science +14

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

Hanxiao Liu, Houqiang Fu, Kai Fu et al. · Applied Physics Letters · 2019 · 31 citations · Full text

Engineering, Materials Engineering, Materials Science +17

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

Kai Fu, Houqiang Fu, Xuguang Deng et al. · Applied Physics Letters · 2021 · 31 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17

Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films

Po-Yi Su, Hanxiao Liu, Chen Yang et al. · Applied Physics Letters · 2020 · 18 citations · Full text

Engineering, Materials Engineering, Materials Science +17