Akitoshi Nishimura Akitoshi Nishimura

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Publications

Citations

688

H-Index

Active since

1989

Affiliations

Texas Instruments (United States)(Current)

Texas Instruments (Japan)

Akitoshi Nishimura Akitoshi Nishimura is an author at Texas Instruments (United States) specializing in materials engineering, natural sciences, and materials science.

Publications per year

1989–1998

Publications

Interface trap-enhanced gate-induced leakage current in MOSFET

I.-C. Chen, C.W. Teng, D. J. Coleman et al. · IEEE Electron Device Letters · 1989 · 100 citations

Engineering, Electrical Engineering, Electronic Materials +16

Effects of Titanium Buffer Layer on Lead-Zirconate-Titanate Crystallization Processes in Sol-Gel Deposition Technique

Katsuhiro Aoki, Yukio Fukuda, Ken Numata et al. · Japanese Journal of Applied Physics · 1995 · 94 citations

Natural Sciences, Materials Engineering, Materials Science +17

Current-Voltage Characteristics of Electron-Cyclotron-Resonance Sputter-Deposited SrTiO3 Thin Films

Yukio Fukuda, Katsuhiro Aoki, Ken Numata et al. · Japanese Journal of Applied Physics · 1994 · 80 citations

Natural Sciences, Materials Engineering, Materials Science +17

Analysis of the Resistance Degradation of SrTiO3 and BaxSr(1-x)TiO3 Thin Films

Ken Numata, Yukio Fukuda, Katsuhiro Aoki et al. · Japanese Journal of Applied Physics · 1995 · 73 citations

Natural Sciences, Materials Engineering, Materials Science +17

Origin of Dielectric Relaxation Observed for Ba0.5Sr0.5TiO3 Thin-Film Capacitor

Yukio Fukuda, Ken Numata, Katsuhiro Aoki Katsuhiro Aoki et al. · Japanese Journal of Applied Physics · 1996 · 73 citations

Natural Sciences, Materials Engineering, Materials Science +17

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