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Origin of Dielectric Relaxation Observed for Ba<sub>0.5</sub>Sr<sub>0.5</sub>TiO<sub>3</sub> Thin-Film Capacitor
72
Citations
8
References
1996
Year
DielectricsEngineeringThin Film Process TechnologyDielectric Relaxation ObservedFerroelectric ApplicationOxygen AmbientSuperconductivityPost-annealed CapacitorsMaterials ScienceMaterials EngineeringElectrical EngineeringPhysicsOxide ElectronicsElectrical InsulationElectrical PropertyElectrochemistryMaterial AnalysisApplied PhysicsCondensed Matter PhysicsThin FilmsDielectric Relaxation
In order to identify the origin of dielectric relaxation of Pt/Ba1-xSrxTiO3/Pt thin-film capacitors, effects of post-annealing in oxygen ambient on their electrical properties were investigated. From comparison of the electrical properties of as-deposited and post-annealed capacitors, it is concluded that electrons from oxygen vacancies in the interfacial depletion region are the origin of the phenomenon.
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