R. Liu

BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability

Hang-Ting Lue, Szu-Yu Wang, Erh-Kun Lai et al. · 2006 · 137 citations

Engineering, Electrical Engineering, Materials Science +17

Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM

Wei-Chih Chien, Y.C. Chen, Erh-Kun Lai et al. · IEEE Electron Device Letters · 2010 · 109 citations

Natural Sciences, Electrical Engineering, Materials Science +17

An access-transistor-free (0T/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device

Yi‐Chou Chen, C.F. Chen, C.T. Chen et al. · 2004 · 93 citations

Engineering, Electrical Engineering, Materials Science +14

A Transient Analysis Method to Characterize the Trap Vertical Location in Nitride-Trapping Devices

Hang-Ting Lue, Yang‐Hsin Shih, K. Y. Hsieh et al. · IEEE Electron Device Letters · 2004 · 51 citations

Engineering, Electrical Engineering, Materials Science +17

Studies of the reverse read method and second-bit effect of 2-bit/cell nitride-trapping device by quasi-two-dimensional model

Hang-Ting Lue, Tzu‐Hsuan Hsu, Min-Ta Wu et al. · IEEE Transactions on Electron Devices · 2005 · 33 citations

Engineering, Electrical Engineering, Materials Science +17