P. Vicente

From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy

Peter J. Klar, H. Grüning, W. Heimbrodt et al. · Applied Physics Letters · 2000 · 182 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +15

Pressure and Temperature Dependent Studies of GaNxAs1-x/GaAs Quantum Well Structures

Peter J. Klar, H. Gr�ning, W. Heimbrodt et al. · physica status solidi (b) · 2001 · 34 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Growth of strained layer superlattices by MOVPE III. Use of UV absorption to monitor alkyl stability in the reactor

G. R. Booker, Morgan Daly, P. C. Klipstein et al. · Journal of Crystal Growth · 1997 · 21 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +10

Quantum-Well and Cavity-Mode Resonance Effects in a Vertical-Cavity Surface-Emitting Laser Structure, Observed by Photoreflectance Using Hydrostatic Pressure and Temperature Tuning

P. Vicente, Philippe Thomas, D. Lancefield et al. · physica status solidi (b) · 1999 · 20 citations

Optical Pumping, Photonics, Conventional Reflectance +12

Raman scattering as a probing method of subsurface damage in SiC

P. Vicente, D. David, J. Camassel · Materials Science and Engineering B · 2001 · 16 citations

Materials Science, Subsurface Damage, Engineering +6