M. L. Lovejoy

Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik et al. · IEEE Transactions on Electron Devices · 2004 · 224 citations

Electrical Engineering, Engineering, Physics +13

Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik et al. · IEEE Transactions on Electron Devices · 2004 · 174 citations

Materials Science, Electrical Engineering, Semiconductor Device +14

Temperature dependence of minority and majority carrier mobilities in degenerately doped GaAs

M. L. Lovejoy, Michael R. Melloch, Mark Lundstrom · Applied Physics Letters · 1995 · 47 citations

Semiconductors, Semiconductor Technology, Engineering +10

Plasma-induced damage of GaAs <i>pn</i>-junction diodes using electron cyclotron resonance generated Cl2/Ar, BCl3/Ar, Cl2/BCl3/Ar, and SiCl4/Ar plasmas

R. J. Shul, M. L. Lovejoy, Dale L. Hetherington et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 31 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Minority-carrier mobility enhancement in <i>p</i>+ InGaAs lattice matched to InP

E. S. Harmon, M. L. Lovejoy, M. R. Melloch et al. · Applied Physics Letters · 1993 · 27 citations

Semiconductors, Semiconductor Technology, Wide-bandgap Semiconductor +11