Photorefractive quantum wells: transverse Franz–Keldysh geometry

Q. Wang, M. R. Melloch, R. M. Brubaker, +1

Journal of the Optical Society of America B

Categoryquantum ElectronicsQuantum PhotonicsOptical MaterialsEngineeringNonlinear Optics +17

Low-Temperature Grown III-V Materials

M. R. Melloch, J. M. Woodall, E. S. Harmon, +5

Annual Review of Materials Science

Materials ScienceMaterials EngineeringSemiconductorsSemiconductor Composite MaterialEngineering +13

Investigations of ammonium sulfide surface treatments on GaAs

M. S. Carpenter, M. R. Melloch, Brett A. Cowans, +2

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

SemiconductorsMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering +11

Role of excess As in low-temperature-grown GaAs

A.C. Warren, J. M. Woodall, P. D. Kirchner, +5

Physical review. B, Condensed matter

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringPoint DefectsEngineering +12

1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As)

A.C. Warren, J. H. Burroughes, J. M. Woodall, +3

IEEE Electron Device Letters

SemiconductorsPhotonicsElectrical EngineeringOptical MaterialsGaas Detector +11

Very low resistance nonalloyed ohmic contacts using low-temperature molecular beam epitaxy of GaAs

M. P. Patkar, T. P. Chin, J. M. Woodall, +2

Applied Physics Letters

Materials ScienceMaterials EngineeringElectrical EngineeringElectronic DevicesSemiconductors +13

Infrared observation of transverse and longitudinal polar optical modes of semiconductor films: Normal and oblique incidence

M. Dean Sciacca, A. J. Mayur, Eunsoon Oh, +6

Physical review. B, Condensed matter

Infrared ObservationOptical MaterialsEngineeringMbe GrowthOptoelectronic Devices +17

Permittivity of GaAs epilayers containing arsenic precipitates

A. Vasudevan, S. Carin, M. R. Melloch, +1

Applied Physics Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering +10

Photoemission spectroscopy of GaAs:As photodiodes

D. T. McInturff, J. M. Woodall, A.C. Warren, +4

Applied Physics Letters

Optical MaterialsEngineeringArsenic ClustersOptoelectronic DevicesGaas Layer +16

Electrical characterization of an epitaxial ZnSe/epitaxial GaAs heterointerface

Qi Qian, Jun Qiu, Masao Kobayashi, +3

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesMetal–insulator–semiconductor Capacitors +11