J. Karasiński

Ultrathin<tex>$hbox Al_2hbox O_3$</tex>and<tex>$hboxHfO_2$</tex>Gate Dielectrics on Surface-Nitrided Ge

Jindi Chen, N.A. Bojarczuk, Huiling Shang et al. · IEEE Transactions on Electron Devices · 2004 · 127 citations

Materials Science, Gate Dielectrics, Electrical Engineering +10

High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition

Supratik Guha, E. Cartier, N. A. Bojarczuk et al. · Journal of Applied Physics · 2001 · 96 citations

Engineering, Alternate Gate Dielectrics, Ultrahigh Vacuum +18

Dermal fibroblasts convert to a myogenic lineage in mdx mouse muscle

Alexander J. Gibson, J. Karasiński, João B. Relvas et al. · Journal of Cell Science · 1995 · 92 citations · Full text

Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal–oxide–semiconductor field-effect transistors: Effective electron mobility

L.-Å. Ragnarsson, Supratik Guha, M. Copel et al. · Applied Physics Letters · 2001 · 83 citations

Materials Science, Semiconductors, Electrical Engineering +14

Thermal activation energies of Mg in GaN:Mg measured by the Hall effect and admittance spectroscopy

Dojin Kim, Dong-Kul Ryu, N. A. Bojarczuk et al. · Journal of Applied Physics · 2000 · 56 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +14