C. W. Pei

High performance 14nm SOI FinFET CMOS technology with 0.0174µm ² embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai et al. · 2014 · 129 citations

Engineering, Computer Engineering, Electrical Engineering +9

GaN grown by molecular beam epitaxy with antimony as surfactant

C. W. Pei, B. Turk, J. B. Héroux et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 20 citations

Engineering, Materials Engineering, Materials Science +17

High quality GaAs grown on Si-on-insulator compliant substrates

C. W. Pei, J. B. Héroux, Julian Sweet et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 18 citations

Engineering, Electrical Engineering, Materials Science +17

Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy

Z. M. Jiang, C. W. Pei, Liang‐Sheng Liao et al. · Thin Solid Films · 1998 · 15 citations

Natural Sciences, Materials Science, Physics +17

Photoluminescence studies of porous silicon microcavities

Zuhong Xiong, Shuai Yuan, Zuimin Jiang et al. · Journal of Luminescence · 1998 · 15 citations

Engineering, Materials Engineering, Materials Science +14